Abstract

Wide-bandgap (WBG) and ultrawide-bandgap (UWBG) semiconductors like GaN and β-Ga₂O₃ promise high-power, high-frequency operation but suffer from severe localized self-heating. This thesis introduces monolithically integrated micro-thin-film thermocouples (micro-TFTCs) for on-chip, high-resolution thermal mapping. A Pt–Cr/borosilicate calibration platform enabled accurate Seebeck-coefficient extraction for 1–10 μm junctions up to 450 °C. Calibrated micro-TFTCs were placed on GaN HEMTs, β-Ga₂O₃ MOSFETs, and SBDs to reveal real-time temperature hotspots and thermal bottlenecks without impairing device performance. The approach offers a scalable, CMOS-compatible solution for precise thermal sensing in next-generation WBG/UWBG power electronics.  

Biography

Hassan Irshad Bhatti is a Ph.D. candidate in Mechanical Engineering in the PSE division at King Abdullah University of Science and Technology (KAUST), conducting his research in the Advanced Semiconductor Laboratory (ASL). He specializes in on-chip thermal characterization of wide- and ultrawide-bandgap devices and brings deep expertise in nanofabrication techniques, as well as multiphysics simulation and finite-element analysis using COMSOL and ANSYS. Hassan is skilled in the design, calibration and integration of micro-thin-film thermal sensors, enabling real-time thermal management and high-resolution temperature mapping. Beyond his research, he contributes as a graduate teaching assistant, serves as a peer reviewer for technical journals and leads the KAUST Tennis Club as its president.