Next generation nanoelectronics for logic and memory are based on devices increasingly smaller, more three-dimensional in shape and containing even more types of materials. Therefore, evaluating nanometre-scale materials properties to correlate with device operation, including carrier profiling, strain, electrical and chemical properties represent a challenge for the materials characterization. Here, after introducing possible future devices for logic and memory, I will present dedicated two- and three-dimensional analysis methods that merge our present capability of materials characterization with correlative, site-specific metrology, and failure analysis. Different techniques and devices are showcased, including fin-based and nanowire-based field-effect transistors (FinFET & GAA), 2D materials and various types of non-volatile resistive switching memories. I will report on the broad role played by scanning probe microscopies for the characterization of state-of-the-art CMOS devices with emphasis on dopant, carrier profiling, and magnetic sensing as studied by two- and three-dimensional methods.
Umberto Celano is a Principal Member of Technical Staff with imec (Belgium) and Asst. Professor at the University of Twente (The Netherlands), with expertise in materials analysis for semiconductor technology, device physics and nanoscale functional materials. He has an electrical engineer background and a master’s in nanoelectronics. He received his Ph.D. in Physics from the University of Leuven - KU Leuven (Belgium) in 2015, working to establish a novel three-dimensional nanoscale imaging technique that combines sensing with sub-nm material removal to study materials in confined volumes. Currently, Dr. Celano’s research interests encompass nanoelectronics, nanophotonic, functional materials and VLSI materials analysis. In these areas, he conducted research in various institutions including KU Leuven, Osaka University and Stanford University.
Umberto is the recipient of the Rogen A. Haken Best Paper Award at IEDM (2013) and has authored or co-authored 60+ papers in international journals and conference proceedings. He works with the metrology working-group in the International Roadmap for Devices and Systems (IRDS) and he is a member of the early carrier editorial board of Nano Letters. Previously, Umberto received his B.Eng. in Electronic Engineering and a M.Sc. degree in Nanoelectronics with honors from the University of Rome Sapienza, Italy.”