ABSTRACT: With the fast development of information storage, exploiting new concepts for dense, fast, and non-volatile random access memory with reduced energy consumption is a significant and challenging task. To realize this goal, electric-field control of magnetism is crucial. In this regard, multiferroic materials are important and have attracted much attention due to their interesting new physics and potentials for exploring novel multifunctional devices. However, single-phase room temperature multiferroic materials are rare, and the multiferroic heterostructures composed of ferromagnetic and ferroelectric materials, provide an alternative way. We have combined ferroelectric Pb(Mg1/3Nb2/3)0.7Ti0.3O3 with different materials and studied the electric-field control of magnetic and electronic properties of thin films grown on Pb(Mg1/3Nb2/3)0.7Ti0.3O3 [1-5]. In this talk, I’ll mention our recent research progress and demonstrate the interesting new physics and potential applications of electric-field control of magnetism in multiferroic heterostructures.
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BIOGRAPHY: Ph. D., Shanghai Institute of Metallurgy (Now Shanghai Institute of Microsystem and Information Technology), Chinese Academy of Sciences, 1990
B. S., Zhejiang University, 1985
9/1999 - present: Professor, Department of Physics, Tsinghua University
6/1992-8/1999: Associate Professor, Tsinghua University
5/1990-5/1992: Postdoctor, Institute of Physics, Chinese Academy of Sciences
3/2002-9/2002: Visiting professor, Center for Superconductivity Research, University of Maryland at College Park
3/1997-9/1999: Research Associate, Center for Superconductivity Research, University of Maryland at College Park